Your Reliable Partner in Beryllium Oxide, Advanced Ceramics, and Precision Metallization
To provide **high-performance advanced ceramic materials** and **precision metallization solutions** for the defense, aerospace, semiconductor, medical, and telecommunications industries. With **vertically integrated manufacturing**, **50+ professional ceramic and electronics engineers**, and **state-of-the-art metrology**, we deliver **reliable, high-quality components** that meet the most demanding technical requirements.
99.5% high-purity beryllium oxide – substrates, rods, crucibles, cylinders, discs, rings, custom shapes
Molybdenum-manganese metallization with nickel/gold plating – excellent solderability, hermetic sealing
Precision patterned metallization for RF/microwave circuits
Direct Bonded Copper / Active Metal Brazed substrates (Al₂O₃, AlN)
Hermetic brazing and welding – kovar, copper, titanium, stainless steel
High-purity alumina (95–99.8%) with MoMn, W, or active brazing
Grinding, lapping, polishing, laser cutting, ultrasonic drilling
ICP, laser particle analysis, helium leak detection, CMM, thermal conductivity testing
Customer: Confidential Defense Electronics Manufacturer
Application: High-power microwave transmission window (C-band radar, satellite communication)
Material: 99.5% BeO Ceramic
Metallization: MoMn + Nickel + Flash Gold Plating
Component Types: Disc, Ball, Ring
The customer required a **hermetic, low-loss microwave window** capable of withstanding **high thermal flux** and **thermal shock** in C-band operation. The ceramic needed to provide:
Coraynic Technology engineered a **custom BeO ceramic metallization solution**:
BeO ceramic disck-ball-ring metalization MoMn+Nickel plating.
Successfully deployed in **C-band radar systems** and **satellite communication ground terminals**. Now in high-volume production.
**Customer:** Leading RF Power Transistor Manufacturer
**Application:** GaN on BeO RF power amplifier packages (X-band, Ku-band)
**Material:** 99.5% BeO Ceramic Substrate
**Metallization:** MoMn + Nickel + Flash Gold Plating
**Substrate Size:** 50.8 × 50.8 × 0.635 mm (2″×2″ standard), also custom 4″×4″
The customer needed a **high-thermal-conductivity substrate** with **patterned metallization** for direct attachment of GaN HEMT dies and passive components. Requirements included:
– Thermal conductivity >280 W/m·K
– CTE matched to GaN/SiC
– Fine-line metallization (0.3 mm line width/space)
– Au flash surface for wire bonding (25 µm Al wire)
– High-volume manufacturing with consistent quality
Coraynic Technology developed a **full-surface and selective-area MoMn metallization process**:
| Parameter | Specification |
|———-|—————|
| Substrate Purity | 99.5% BeO |
| Thermal Conductivity | 310 W/m·K @25°C |
| Dielectric Constant | 6.9 @1MHz, 6.8 @10GHz |
| Dissipation Factor | ≤4×10⁻⁴ @1MHz, ≤4×10⁻⁴ @10GHz |
| Metallization | MoMn (15–25 µm) + Ni (3–7 µm) + Au flash (0.05–0.1 µm) |
| Line Width / Space | 0.3 mm / 0.3 mm |
| Edge Wrap | Top to bottom metallization, ±0.1 mm tolerance |
| Flatness | <0.035 mm |
| Camber | ≤2‰ |
| Wire Bond Strength | >10 gf (25 µm Al wire, 45° pull) |
– **Production Volume:** 10,000+ pieces delivered with 100% QC pass rate
– **Yield:** >98% (metallization adhesion, dimensional tolerance)
– **Thermal Performance:** Junction temperature reduced by 22°C compared to AlN alternative
– **Reliability:** Passed 500 thermal cycles (-55°C to +150°C) – no microcracks, no metallization lift
– **Solderability:** 98% wetting rate (Au/Sn eutectic reflow)
Qualified and in mass production for **5G base station power amplifiers** and **defense radar T/R modules**.
Customer:** Aerospace & Nuclear Instrumentation Supplier
**Application:** High-voltage feedthrough insulators, hermical connectors, vacuum feedthroughs
**Material:** 95–99.8% Al₂O₃ Ceramic
**Metallization:** MoMn, W (Tungsten), or Active Brazing (Ag-Cu-Ti)
**Metal Partners:** Kovar, Oxygen-Free Copper, Titanium, Stainless Steel
**Components:** Feedthroughs, standoffs, window frames, multi-pin connectors
The customer required **hermetic ceramic-to-metal seals** for **high-vacuum and high-voltage environments**. Critical requirements included:
– Vacuum tightness <1×10⁻¹¹ Pa·m³/s
– Dielectric strength >30 kV/mm
– Operating temperature: -55°C to +300°C
– Corrosion resistance (salt spray, humidity)
– Custom geometries: stepped bores, flanged rims, multi-pin arrays
Coraynic Technology leveraged its **Al₂O₃ metallization and brazing expertise**:
| Ceramic Grade | Purity | Density | Metallization | Brazing Filler | Metal Partner |
|—————|——–|——–|—————|—————-|—————|
| A-95 | 95% | ≥3.65 g/cm³ | MoMn | Ag-Cu28 | Kovar, Copper |
| A-99 | 99% | ≥3.85 g/cm³ | W (Tungsten) | Ag-Cu-Ti (active) | Titanium |
| A-99.8 | 99.8% | ≥3.90 g/cm³ | MoMn + Ni | Au-Ge, Au-Sn | Stainless Steel |
– **Hermeticity:** <5×10⁻¹² Pa·m³/s – helium leak tested, 100% pass
– **Dielectric Strength:** ≥40 kV/mm (1 mm wall thickness)
– **Insulation Resistance:** >10¹⁴ Ω·cm @25°C
– **Mechanical Strength:** Tensile load >30 MPa (brazed joint)
– **Custom Capability:**
– Minimum hole diameter: 0.2 mm (metallized through-hole)
– Maximum part size: Ø300 mm
– Complex geometries: stepped bores, external threads, internal flanges
Successfully deployed in **nuclear instrumentation**, **satellite power systems**, and **medical X-ray equipment**. Long-term supply agreement in place.
| Grade | Purity | Thermal Conductivity | Dielectric Constant | Typical Applications |
|——-|——–|———————-|———————|———————-|
| B-99 | 99% | ≥260 W/m·K | 6.6 ±0.2 (1MHz) | General-purpose substrates, heat sinks |
| B-99.5 | 99.5% | ≥285 W/m·K | 6.6 ±0.2 (1MHz) | High-power RF, microwave, aerospace |
| B-995 | 99.5% (Crucible) | 325 W/m·K (max) | 6.6 ±0.2 (1MHz) | Precious metal melting, crystal growth |
**Available Forms:** Substrates, rods, crucibles, cylinders, discs, rings, windows, custom 3D shapes
| Grade | Purity | Density | Flexural Strength | Dielectric Strength | Applications |
|——-|——–|——–|——————-|———————|————–|
| A-95 | 95% | ≥3.65 g/cm³ | ≥280 MPa | ≥30 kV/mm | Vacuum feedthroughs, connectors |
| A-97 | 97% | ≥3.70 g/cm³ | ≥300 MPa | ≥35 kV/mm | High-insulation components |
| A-99 | 99% | ≥3.85 g/cm³ | ≥455 MPa | ≥54 kV/mm | Semiconductor equipment, aerospace |
| A-99.8 | 99.8% | ≥3.90 g/cm³ | ≥500 MPa | ≥60 kV/mm | Medical devices, precision optics |
| Metallization Type | Thickness | Plating | Features |
|———————|———-|——–|———-|
| **MoMn** (Moly-Manganese) | 15–38 µm | Ni (2–10 µm), Au flash (0.05–0.3 µm) | High bond strength, hermetic, solderable |
| **W** (Tungsten) | 10–25 µm | Ni, Au | High-temperature stability, matched CTE |
| **Active Brazing** (Ag-Cu-Ti) | 20–50 µm | – | Direct brazing without prior metallization |
| **Thin Film** (Ti/Pt/Au, NiCr) | 0.1–5 µm | Au | Fine-line circuits, wire bonding |
| **Thick Film** (Ag, AgPd) | 10–20 µm | – | Power hybrid circuits, chip attachment |
**Metallization Patterns:**
– Full surface
– Selective area (CAD-defined)
– Edge wraps
– Via holes (metallized through-holes)
– Laser scribed isolation grooves
| Metal Partner | Brazing Filler | Application |
|—————|—————-|————-|
| Kovar (Fe-Ni-Co) | Ag-Cu28 | Hermetic packages, feedthroughs |
| Oxygen-Free Copper | Ag-Cu28, Au-Sn | High thermal conductivity joints |
| Titanium (Ti, Ti-alloys) | Ag-Cu-Ti (active) | Lightweight, corrosion-resistant assemblies |
| Stainless Steel (304, 316) | Au-Ge, Ag-Cu | High-strength, high-temperature seals |
**Sealing Performance:**
– Hermeticity: <5×10⁻¹² Pa·m³/s
– Tensile Strength: ≥30 MPa
– Operating Temperature: -269°C to +600°C (depending on filler)
– Thermal Cycling: >1000 cycles (-55°C to +150°C)
