Subtitle:

Precision Metallized Beryllia Ceramics for High-Power RF, Microwave Vacuum Devices, Hermetic Packaging, and Thin-Film Circuits

Beryllium Oxide (BeO) ceramic is the material of choice when extreme thermal management and electrical insulation are required. With thermal conductivity up to 310 W/m·K (second only to diamond) and a low dielectric constant of 6.6–6.9, BeO is indispensable in high-power, high-frequency applications.

Coraynic Technology offers 99.5% high-purity BeO ceramics with two advanced metallization options:

1. MoMn + Nickel Plating – Thick-film metallization for hermetic sealing, brazing, and high-reliability packaging (military/aerospace, power electronics).
2. Thin-Film Metallization via Vacuum Magnetron Sputtering – Precision patterned metal layers (Ti/Pt/Au, NiCr, etc.) for high-density circuits, wire bonding, and RF/microwave components.

Both processes preserve the intrinsic properties of the BeO substrate while providing excellent adhesion, solderability, wire bondability, and hermeticity.

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Key Features & Benefits

 

| Feature | Benefit |

|———|———|

| Ultra-High Thermal Conductivity | 285–310 W/m·K – 12× Al₂O₃, 1.7× AlN |

| Low Dielectric Loss | 6.6–6.9 @1MHz, tan δ ≤4×10⁻⁴ – ideal for RF/microwave |

| CTE Matched to Semiconductors | 7.0–9.2 ×10⁻⁶/°C – compatible with Si, GaAs, GaN, kovar |

| MoMn + Ni Plating | 15–38 µm MoMn + 2–10 µm Ni – high bond strength, hermetic, solderable |

| Thin-Film Sputtering | 0.1–5 µm precision layers – Ti/Pt/Au, NiCr, TiW/Au, etc. |

| Vacuum Magnetron Sputtering | Uniform, dense, pinhole-free films – excellent adhesion |

| Pattern Customization | Full surface, selective area, edge wraps, via holes, laser scribing |

| Hermetic Sealing Capable | <5×10⁻¹² Pa·m³/s – vacuum-tight, suitable for brazing/welding |

| Wire Bond Ready | Gold flash surface – 25 µm Al wire, 50 µm Au wire compatible |

| High Reliability | Passes 1000+ thermal cycles (-55°C to +150°C) |

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Technical Specifications (99.5% BeO Base Material)

 

| Property | Unit | Value |

|———-|——|——-|

| Purity | % | 99.5 |

| Density | g/cm³ | 2.88–3.05 |

| Color | – | White |

| Thermal Conductivity (25°C) | W/m·K | 285–310 |

| Thermal Conductivity (100°C) | W/m·K | 220 |

| Dielectric Constant (1MHz) | – | 6.6 ±0.2 |

| Dielectric Constant (10GHz) | – | 6.8 ±0.2 |

| Dissipation Factor (1MHz) | – | ≤4×10⁻⁴ |

| CTE (25–500°C) | ×10⁻⁶/°C | 7.0–9.2 |

| Volume Resistivity (25°C) | Ω·cm | >10¹⁴ |

| Dielectric Strength (DC) | kV/mm | ≥25–40 |

| Flexural Strength | MPa | ≥200 |

| Compressive Strength | MPa | >350 |

| Surface Roughness (Ra) – as fired | μm | 0.2–0.8 |

| Surface Roughness (Ra) – polished | μm | <0.1 |

| Camber | ‰ | ≤2 |

| Air Tightness | Pa·m³/s | ≤5×10⁻¹² |

| Grain Size | μm | 10–20 |

 

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Metallization Option 1: MoMn + Nickel Plating

Process Description

 

The MoMn (Molybdenum-Manganese) process is a thick-film metallization method widely used for high-reliability ceramic-to-metal sealing. A MoMn paste is screen-printed or coated onto the BeO surface and sintered at ≤1550°C in a controlled atmosphere, forming a strong chemical bond with the ceramic.

A nickel plating layer (2–10 µm) is then applied to protect the MoMn and provide a solderable, brazable surface. Optional gold flash (0.05–0.3 µm) can be added for oxidation resistance and wire bonding.

 

Specifications – MoMn + Ni Plating

| Parameter | Value |

|———-|——-|

| Metallization Material | MoMn (Molybdenum-Manganese) |

| MoMn Thickness | 15–38 µm |

| Nickel Plating Thickness | 2–10 µm |

| Gold Flash (optional) | 0.05–0.3 µm |

| Sintering Temperature | ≤1550°C (optimized for BeO preservation) |

| Peel Strength (90° peel, 50 mm/min) | >15 N/mm (on Al₂O₃); >12 N/mm on BeO |

| Sealing Strength (brazed joint) | ≥30 MPa |

| Solderability | >95% wetting rate (Au/Sn, Ag/Cu) |

| Hermeticity | <5×10⁻¹² Pa·m³/s |

| Thermal Cycling | >1000 cycles (-55°C to +150°C) |

 

Applications – MoMn + Ni Plating

 

| Industry | Application |

|———-|————-|

| Defense & Aerospace | Radar T/R modules, traveling wave tube (TWT) components, missile guidance |

| Telecommunications | High-power RF transistor packages (GaN, GaAs), base station amplifiers |

| Power Electronics | IGBT modules, high-current feedthroughs, power hybrid circuits |

| Medical | X-ray tube insulators, gas laser cavities |

| Nuclear | Hermetic feedthroughs for instrumentation |

 

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Metallization Option 2: Thin-Film via Vacuum Magnetron Sputtering

 

Process Description

 

Vacuum Magnetron Sputtering is a physical vapor deposition (PVD) technique used to deposit ultra-thin, highly uniform metal films onto BeO ceramic substrates. The process takes place in a high-vacuum chamber where a plasma is generated to eject atoms from a target material, which then condense onto the substrate.

 

This method enables:

– Precision thickness control (angstrom to micron level)

– Excellent adhesion without high-temperature sintering

– Fine-line patterning (down to 10–20 µm line/space)

– Multi-layer stacks (e.g., Ti/Pt/Au, NiCr/Au, TiW/Au)

– Low thermal budget – no damage to BeO properties

 

Typical Thin-Film Layer Stacks

 

| Stack | Layer 1 | Layer 2 | Layer 3 | Application |

|——-|———|———|———|————-|

| Ti/Pt/Au | Ti: 50–100 nm | Pt: 100–200 nm | Au: 200–1000 nm | Wire bonding, eutectic die attach |

| NiCr/Au | NiCr: 100–300 nm | Au: 300–1000 nm | – | Resistors, bond pads |

| TiW/Au | TiW: 100–300 nm | Au: 300–2000 nm | – | Diffusion barrier, high-temperature |

| Cr/Au | Cr: 50–100 nm | Au: 200–1000 nm | – | General-purpose metallization |

| TaN/TiW/Au | TaN: 50–100 nm | TiW: 100–300 nm | Au: 300–2000 nm | Precision resistors, stable contacts |

 

Specifications – Thin-Film Sputtering

| Parameter | Value |

|———-|——-|

| Film Thickness Range | 0.01–5 µm (10 nm – 5 µm) |

| Thickness Tolerance | ±5% (for <1 µm), ±10% (for >1 µm) |

| Minimum Line Width | 10–20 µm (depending on photolithography) |

| Minimum Line Spacing | 10–20 µm |

| Adhesion (tape test) | 5/5 (no peeling) |

| Wire Bond Strength | >10 gf (25 µm Al wire), >50 gf (50 µm Au wire) |

| Resistivity (Au) | 2.2–3.0 µΩ·cm |

| Surface Roughness (Ra) | <0.05 µm (on polished BeO) |

| Patterning Method | Photolithography + lift-off or etching |

 

Applications – Thin-Film Sputtering

| Industry | Application |

|———-|————-|

| RF & Microwave | High-frequency substrates, microstrip circuits, filters, couplers |

| Optoelectronics | Laser diode submounts, photodiode packages, VCSEL arrays |

| Semiconductor | Wafer probing cards, MEMS packaging, sensor interfaces |

| Medical | Implantable device feedthroughs, microelectrode arrays |

| Quantum Computing | Cryogenic microwave resonators, qubit control lines |

| Research & Development | Custom test structures, prototype circuits |

 

Comparison: MoMn + Ni Plating vs. Thin-Film Sputtering

 

| Feature | MoMn + Ni Plating | Thin-Film Sputtering |

|———|——————-|———————-|

| Layer Thickness | 15–50 µm (thick film) | 0.01–5 µm (thin film) |

| Minimum Feature Size | 100–300 µm | 10–20 µm |

| Adhesion Mechanism | Chemical bond via sintering | Physical bond via sputtering |

| Process Temperature | 1300–1550°C | <200°C |

| Surface Roughness | Follows substrate roughness | Can planarize, very smooth |

| Solderability | Excellent (thick Ni/Au) | Good (requires thicker Au for soldering) |

| Wire Bonding | Good (Au flash) | Excellent (smooth, pure Au) |

| Hermetic Sealing | Excellent (brazing) | Limited to thin-film sealing layers |

| Best For | Power packages, hermetic feedthroughs, high-current | High-frequency circuits, fine-line patterns, sensors |

 

Standard & Custom Sizes

 

Substrates (Rectangular / Square)

 

| Thickness (mm) | Length × Width (mm) |

|—————-|———————|

| 0.254 (0.010″) | 25.4 × 25.4 (1″×1″) |

| 0.385 | 50.8 × 50.8 (2″×2″) |

| 0.5 | 76.2 × 76.2 (3″×3″) |

| 0.635 | 101.6 × 101.6 (4″×4″) |

| 1.0 | 114.3 × 114.3 (4.5″×4.5″) |

| 1.5 | Custom dimensions |

 

Disc / Round Substrates

 

| Diameter (mm) | Thickness Range (mm) |

|—————|———————-|

| 20, 26, 30, 35, 50, 52, 60, 75, 100, 110 | 0.25 – 2.0 |

 

Custom Shapes & Features

 

| Component Type | Options |

|—————-|———|

| Rods | Traveling wave tube supports, clamping bars |

| Cylinders / Tubes | Feedthrough insulators, vacuum envelopes |

| Windows | Microwave transmission windows (C-band, X-band) |

| Rings | Hermetic sealing spacers, ball rings |

| Custom Profiles | Stepped, tapered, flanged, threaded, notched |

| Metallization Patterns | Full surface, selective areas, edge wraps, via holes, laser scribing |

 

Successful Project Examples

 

✅ Project 1: Metallized BeO Disc / Ball / Ring for C-Band Window

– Components: Disc-Ball-Ring (Ø66*/3.2 mm)

– Metallization: MoMn + Ni

– Application: High-power microwave window in C-band window

– Outcome: Hermeticity <5×10⁻¹² Pa·m³/s, passed 1000 thermal cycles

 

✅ Project 2: BeO Substrate with MoMn + Flash Gold for laser Package

– Substrate: 22 × 12 × 2 mm

– Metallization: MoMn (7.62-17.78 µm) + Ni (2.54-3.81µm) + Au flash (0.8~1.3 µm)

– Application: laser electronics

– Outcome: 98% yield, 22°C lower junction temperature vs. AlN

 

✅ Project 3: Thin-Film Sputtered BeO for Microwave Integrated Circuit

-Substrate:11*11*1.10mm. MoMn10-15um, Nikel:1.3~2.0um

– Application: X-band microstrip filter

– Outcome: Line width 20 µm, insertion loss <0.5 dB at 10 GHz

 

Engineering Capability

✅ Manufacturing Equipment

 

| Equipment | Function |

|———-|———-|

| Vacuum Magnetron Sputtering System | Multi-target, DC/RF, up to 200 mm wafer size |

| MoMn Screen Printing & Sintering Line | 1550°C controlled atmosphere furnaces |

| Nickel/Gold Plating Line | Electrolytic and electroless, thickness control ±1 µm |

| CNC Precision Grinding | Flatness <0.035 mm, camber ≤2‰ |

| Laser Cutting & Drilling | Via holes, scribing, contour cutting ±0.01 mm |

| Photolithography Suite | UV exposure, spin coating, developing – 10 µm resolution |

| Ultrasonic Machining | Complex 3D shapes, brittle materials |

 

✅ Metrology & Quality Assurance

 

| Instrument | Application |

|———–|————-|

| ICP Plasma Spectrometer | Purity analysis, trace element detection |

| Laser Particle Analyzer | Powder particle size distribution |

| Universal Tool Microscope | Dimensional inspection, edge quality |

| Surface Roughness Tester | Ra, Rz verification |

| Helium Leak Detector | Air tightness testing (<5×10⁻¹² Pa·m³/s) |

| Thermal Conductivity Meter | Laser flash method (25°C–1000°C) |

| Dielectric Strength Tester | HV breakdown verification |

| Wire Bond Pull Tester | Bond strength validation |

| CMM (Coordinate Measuring Machine) | 3D dimensional tolerance certification |

| Scanning Electron Microscope (SEM) | Film morphology, cross-section analysis |

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Why Choose Coraynic Technology?

– Vertically Integrated: From BeO powder to metallized finished component – all in-house.

– Dual Metallization Expertise: Both thick-film (MoMn) and thin-film (sputtering) capabilities.

– Defense & Aerospace Qualified: Supplier to state-owned defense enterprises; ITAR compliant.

– Custom Engineering: Our team assists with pattern design, film stack selection, and brazing compatibility.

– Process Control: 100% QC with advanced analytics – ICP, helium leak detection, SEM.

– Global Shipping: UN 1566 6.1/PG 2 certified packaging for BeO products.

– Compliance: RoHS, CE, REACH. Full SDS and material traceability provided.