Aluminum nitride BGA substrates for silicon-based microsystem package

Silicon-based microsystems using the MEMS process for system module integration is a new direction for future micromodule technology, which can significantly reduce the module product size.
product size. The newly developed aluminum nitride BGA substrate for silicon-based microsystem packaging has a pad alignment accuracy of ±0.3%, which enables the alignment of aluminum nitride multilayer substrates with silicon-based semiconductor processes.
The newly developed aluminum nitride BGA substrate has a pad alignment accuracy of ±0.3%, which enables the alignment of the aluminum nitride multilayer substrate with the high-precision pads of the silicon-based semiconductor process.
The excellent heat dissipation performance of the aluminum nitride substrate and the matching of the expansion coefficient with silicon effectively solve the heat dissipation requirements of the three-dimensional ball grid array and the problem of stress matching, realizing the technical system requirements of stress matching, heat dissipation, and high-density interconnection for silicon-based microsystems.
Features
◇Working frequency: DC-18GHz.
◇ceramic thermal conductivity: ≥170W/m-K.
◇Transfer structure: microstrip \G-S-G\BGA.
◇Port impedance: 50Ω.
◇Core area bonding method: alloy solder, conductive adhesive.
◇Shell side wall: silicon or metal wall.
◇BGA ball diameter: 0.3mm, 0.35mm, 0.4mm, 0.45mm, 0.5mm.